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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV12 VHF power transistor
Product specification September 1991
Philips Semiconductors
Product specification
VHF power transistor
FEATURES * Emitter-ballasting resistors for an optimum temperature profile * Excellent reliability * Withstands full load mismatch. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap. It is designed for common emitter, class-B operation in mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from the mounting flange. PINNING - SOT123 PIN 1 2 3 4 DESCRIPTION collector emitter base emitter
handbook, halfpage
BLV12
QUICK REFERENCE DATA RF performance at Tmb = 25 C in a common emitter test circuit. MODE OF OPERATION c.w. class-B f (MHz) 175 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. VCE (V) 12.5 PL (W) 30 GP (dB) >9 C (%) > 60
PIN CONFIGURATION
halfpage
1
4 c
b
MBB012
e
2
3
MSB057
Fig.1 Simplified outline and symbol.
September 1991
2
Philips Semiconductors
Product specification
VHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC, IC(AV) ICM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation CONDITIONS open emitter open base open collector DC or average value peak value f > 1 MHz RF operation; f > 1 MHz; Tmb = 25 C - - - - - - MIN.
BLV12
MAX. 36 16 3 6 18 100
UNIT V V V A A W
Tstg Tj
storage temperature range junction operating temperature
-65 -
150 200
C C
MRA372
120 handbook, halfpage Ptot (W)
100 I 80
II
60
40
20
0 0
20
40
60
80
100 120 o Th ( C)
(I) Continuous DC operation. (II) Short time operation during mismatch (f > 1 MHz)
Fig.2 Power/temperature derating curve.
THERMAL RESISTANCE SYMBOL Rth j-mb(RF) Rth mb-h PARAMETER from junction to mounting base from mounting base to heatsink CONDITIONS Ptot = 100 W; Tmb = 25 C MAX. 1.75 0.3 UNIT K/W K/W
September 1991
3
Philips Semiconductors
Product specification
VHF power transistor
CHARACTERISTICS Tj = 25 C. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE fT PARAMETER collector-base breakdown voltage CONDITIONS open emitter; Ic = 10 mA MIN. 36 16 3 - 25 -
BLV12
TYP. MAX. UNIT - - - - 35 1.6 - - - 10 - - GHz V V V mA
collector-emitter breakdown voltage open base; Ic = 25 mA emitter-base breakdown voltage collector-emitter leakage current DC current gain transition frequency open collector; IE = 2 mA VBE = 0; VCE = 16 V VCE = 5 V; IC = 4 A VCE = 12.5 V; IE = 4 A; f = 500 MHz VCB = 12.5 V; IE = Ie = 0; f = 1 MHz VCE = 12.5 V; IC = 0; f = 1 MHz f = 1 MHz
Cc
collector capacitance
-
90
100
pF
Cre
feedback capacitance
-
60
70
pF
Cc-f
collector-flange capacitance
-
2
-
pF
MRA378
MRA374.1
handbook, 50 halfpage
250 handbook, halfpage Cc (pF) 200 VCE = 12.5 V
h
FE 40
30 VCE = 5 V
150
20
100
10
50
0
0 0 4 8 12 IC (A) 16 0 4 8 12 16 VCB (V)
IE = ie = 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector current, typical values.
Fig.4
Collector capacitance as a function of collector-base voltage, typical values.
September 1991
4
Philips Semiconductors
Product specification
VHF power transistor
BLV12
handbook, halfpage
2
MRA375
fT (GHz) 1.5
1
0.5
0 0 2 4 6 8 I E (A) VCB = 12.5 V. 10
Fig.5
Transition frequency as a function of emitter current, typical values.
September 1991
5
Philips Semiconductors
Product specification
VHF power transistor
APPLICATION INFORMATION RF performance at Tmb = 25 C in a common emitter test circuit. MODE OF OPERATION c.w. class-B 175 f (MHz) 12.5 VCE (V) 30 PL (W) GP (dB) >9 typ. 9.8
BLV12
C (%) > 60 typ. 66
MRA367
MRA371
handbook, halfpage G
P (dB)
(%) 70
handbook,50 halfpage
12
P L (W) 40
GP 8 50
30
20 4 30 10
0 10
10 20 30 40 P (W) L
0
0
2
4
6
P (W) IN
8
Class-B operation; VCE = 12.5 V; f = 175 MHz.
Class-B operation; VCE = 12.5 V; f = 175 MHz.
Fig.6
Gain and efficiency as functions of load power, typical values.
Fig.7
Load power as a function of drive power, typical values.
Ruggedness in class-B operation The BLV12 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases at rated output power, up to a supply voltage of 15.5 V, and f = 175 MHz.
September 1991
6
Philips Semiconductors
Product specification
VHF power transistor
BLV12
handbook, full pagewidth
C6a L5 C1 50 C3a L1 T.U.T. C6b L6 C4 C5 R2 L7
C7 50 C8
L4 C2 L2 C3b
R1
L3
L8 +VCC
MGP247
Fig.8 Class-B test circuit at f = 175 MHz.
List of components (see test circuit) COMPONENT C1 C2, C8 C3a, C3b C4 C5 C6a, C6b C7 L1 L2 L3, L8 L4, L5 L6 DESCRIPTION film dielectric trimmer film dielectric trimmer 500 V ceramic capacitor 500 V ceramic capacitor polyester capacitor 500 V ceramic capacitor film dielectric trimmer 1 turn enamelled 1.6 mm copper wire 7 turns closely wound enamelled 0.5 mm copper wire grade 3B Ferroxcube wideband HF choke stripline (note 1) 2 turns enamelled 1.6 mm copper wire 12 mm x 6 mm; note 2 int. dia. 5 mm; length 6 mm; leads 2 x 5 mm int. dia. 4.5 mm; length 6 mm; leads 2 x 5 mm 10 , 5% 4.7 , 5% 100 nH VALUE 2.5 to 20 pF 4 to 40 pF 47 pF 120 pF 100 nF 8.2 pF 5 to 60 pF int. dia. 9 mm; leads 2 x 5 mm int. dia. 3 mm; leads 2 x 5 mm 4312 020 36640 2222 809 07011 DIMENSIONS CATALOGUE NO. 2222 809 07004 2222 809 07008
L7
2 turns enamelled 1.6 mm copper wire
R1 R2 Notes
0.25 W carbon resistor 0.25 W carbon resistor
1. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric, thickness 116 inch. 2. Taps for capacitors C3a and C3b are situated 5 mm from the transistor.
September 1991
7
Philips Semiconductors
Product specification
VHF power transistor
BLV12
handbook, full pagewidth
150
72
L3 C4 R1 L2 C1 C2 L1 L4 C3b C3a L5 L7 L6
L8 +VCC C5 C6a C7 C8 R2
C6b
rivet
MGP245
The circuit and components are situated on one side of an epoxy fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections are made by means of hollow rivets and copper straps under the emitters, to provide a direct contact between the component side and the ground plane.
Fig.9 Component layout for 175 MHz class-B test circuit.
September 1991
8
Philips Semiconductors
Product specification
VHF power transistor
BLV12
MRA369
3 handbook, halfpage Zi () 2 ri
MRA370
4 handbook, halfpage ZL ()
3 RL
2
1
1 xi
0 XL
-1
0 100
150
200
f (MHz)
250
-2 100
150
200
f (MHz)
250
Class-B operation; VCE = 12.5 V; PL = 30 W.
Class-B operation; VCE = 12.5 V; PL = 30 W.
Fig.10 Input impedance (series components) as a function of frequency, typical values.
Fig.11 Load impedance (series components) as a function of frequency, typical values.
MRA368
handbook, halfpage G
P (dB)
15
10
handbook, halfpage
5 Zi ZL
MBA451
0 100
150
200 f (MHz)
250
Class-B operation; VCE = 12.5 V; PL = 30 W.
Fig.12 Definition of transistor impedance.
Fig.13 Power gain as a function of frequency, typical values.
September 1991
9
Philips Semiconductors
Product specification
VHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLV12
SOT123A
D
A F q U1 C B
w2 M C H L b c
4
3
A
p
U2
U3
1 2
H
w1 M A B
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.47 6.37 0.294 0.251 b 5.82 5.56 c 0.18 0.10 D 9.73 9.47 D1 9.63 9.42 F 2.72 2.31 H 20.71 19.93 L 5.61 5.16 p 3.33 3.04 Q 4.63 4.11 q 18.42 U1 25.15 24.38 0.99 0.96 U2 6.61 6.09 0.26 0.24 U3 9.78 9.39 0.385 0.370 w1 0.51 0.02 w2 1.02 45 0.04
0.229 0.007 0.219 0.004
0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785
0.221 0.131 0.203 0.120
0.182 0.725 0.162
OUTLINE VERSION SOT123A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
September 1991
10
Philips Semiconductors
Product specification
VHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV12
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1991
11

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